NDP6030PL Datasheet

TO220B03 Pkg Drawing

Datasheet specifications

Datasheet's name TO220B03 Pkg Drawing
File size 99.003 KB
File type pdf
Number of pages 1

Download Datasheet TO220B03 Pkg Drawing

Download Datasheet

Other documentations

No other documentation was found!

Technical specifications

  • Manufacturer: ON Semiconductor
  • Series: -
  • Packaging: Tube
  • Part Status: Obsolete
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 19A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 36nC @ 5V
  • Vgs (Max): ±16V
  • Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 15V
  • FET Feature: -
  • Power Dissipation (Max): 75W (Tc)
  • Operating Temperature: -65°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
  • Base Part Number: NDP603
  • detail: P-Channel 30V 30A (Tc) 75W (Tc) Through Hole TO-220-3

Similar products